| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d188ec23eddac02e70cfb65844dd4fd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 |
| filingDate |
1981-02-04^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d94caeb86b1b7d00991e6472caa0a993
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04da9cfc1d85ffd2a9e34e816c08da2d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3850d31ac242cae75f3318f920c14cdb |
| publicationDate |
1982-08-06^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
FR-2499318-A1 |
| titleOfInvention |
METHOD FOR PRODUCING AN OPTOELECTRONIC GAALAS DIODE AND DIODE OBTAINED BY THIS METHOD |
| abstract |
PROCESS FOR MAKING A DIODE INCLUDING A SURFACE LAYER 12 IN GAALAS LOCALLY SUPPORTING A CONTACT STRUCTURE 13. PROCESS CHARACTERIZED IN THAT THE LAYER 12, BEFORE THE STRUCTURE 13 IS PREPARED, IS COVERED ENTIRELY WITH A TITANIUM FILM 15 WHICH IS PERMANENTLY LEFT IN PLACE. APPLICATION TO ELECTROLUMINESCENT DIODES FOR EXAMPLE. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0184117-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0184117-A2 |
| priorityDate |
1981-02-04^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |