http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2516911-A1

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C21-00
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filingDate 1982-11-22^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2a367b14574455786e1ebafa95b475c
publicationDate 1983-05-27^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber FR-2516911-A1
titleOfInvention LOW TEMPERATURE REDUCTION PROCESS FOR PHOTOMASKS
abstract GLASS PHOTOMASKS, CARRYING A HIGH RESOLUTION IMPREGNATED DESIGN AND INTENDED TO BE USED IN PHOTOLITHOGRAPHIC MANUFACTURING OPERATIONS, ARE PREPARED BY MIGRATION OF STAIN-FORMING IONS BY IMPREGNATION INTO THE SURFACE OF A GLASS SUBSTRATE AND AGGREGATION AND BY REDUCTION OF THESE STAIN FORMATORS BY IMPREGNATION IN THE PRESENCE OF PURE HYDROGEN UNDER PRESSURE, AT RELATIVELY LOW TEMPERATURES, IN ORDER TO OBTAIN A HIGH RESOLUTION IMPREGNATED DRAWING. LARGE GLASS PHOTOMASKS, BEARING A HIGH RESOLUTION IMPREGNATED DESIGN AND INTENDED TO BE USED IN PHOTOLITHOGRAPHIC MANUFACTURING OPERATIONS, ARE PREPARED BY MIGRATION OF STAIN-FORMING IONS BY IMPREGNATION IN THE SURFACE OF A GLASS SUBSTRUCTION AND SUBSTRUCTION AGGLOMERATION OF THESE STAIN-FORMING IONS BY IMPREGNATION IN THE PRESENCE OF PURE HYDROGEN UNDER PRESSURE, AT RELATIVELY LOW TEMPERATURES, IN ORDER TO OBTAIN A HIGH RESOLUTION IMPREGNATED DESIGN.
priorityDate 1981-11-20^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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