| abstract |
THE INVENTION CONCERNS A SEMICONDUCTOR-GLASS SUPPORT STRUCTURE OBTAINED BY CONNECTING SEMI-CONDUCTIVE LAYERS TO A GLASS SUPPORT CONSTITUTING AT LEAST TWO GLASSES. THE SEMI-CONDUCTIVE LAYERS ARE CONSTITUTED OF AT LEAST ONE LAYER OF AN ELECTRICALLY AND OPTICALLY ACTIVE 3 N-AIRE III-V COMPOUND, AND POSSIBLE ADDITIONAL LAYERS FOR PASSIVATION 4, ADAPTATION OF INDEX 6, PROTECTION 7 THE INVENTION IS REMARKABLE IN THAT, TO KEEP THE SAID LAYER ACTIVE IN A STATE OF COMPRESSION SO AS NOT TO DETERIORATE ITS ELECTRICAL PROPERTIES, IT USES AT LEAST TWO GLASSES, A BUFFER GLASS 15 PROVIDING ITS THERMOELASTIC PROPERTIES AND A SUPPORT GLASS 16 PROVIDING ITS HIGH SOFTENING TEMPERATURE. APPLICATIONS: PHOTOCATHODES, LOAD TRANSFER DEVICES, ETC. |