| abstract |
The invention relates to a method for manufacturing an electronic component with self-aligned source, drain and gate, comprising the following steps: a) forming a dummy gate on a silicon substrate (100), b) forming a source (118) and a drain (120) on either side of the dummy grid, c) the self-aligned surface siliciding of the source and drain, d) the deposition of at least one layer of metal (130, 132), called contact, e) replacing the dummy grid with at least one final grid (150). |