| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31b1220216408a6076f55e0ba4ec1003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99505f5f312672820e9f78c254c00a4d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-931 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0495
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6606 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 |
| filingDate |
2002-03-14^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51ebbf33b29ce7a9a7444e36f3ce8afb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_318550be9165a03b760cf91fe6b1cdd8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4724b21be9fe9cba7ad431367273ea8e |
| publicationDate |
2003-09-19^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
FR-2837322-A1 |
| titleOfInvention |
SiCOI SUBSTRATE POWER SCHOTTKY DIODE AND METHOD FOR MAKING SAME |
| abstract |
The present invention relates to a power junction device comprising a SiCOI type substrate with a silicon carbide layer (16) insulated from a solid support (12) by a buried layer of insulation (14), and comprising at least a Schottky contact between a first metal layer (40) and the surface layer of silicon carbide (16), the first metal layer (30) constituting an anode. |
| priorityDate |
2002-03-14^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |