| abstract |
For example, in order to improve the ohmic contact between two metal parts (10, 20) located at a metallization level (M3), these two parts are equipped with two remote vias (101, 201) located at the level of metallization (M3). and at least partially at the level of vias (V3) immediately higher. Each remote via comprises for example a stainless or quasi-stainless compound such as a Ti / TiN barrier layer. |