http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1185362-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e34ccb3eb8874edd93ffa4ee50338a6a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49099 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-12611 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-1275 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C1-148 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C17-232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C7-006 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01C7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01C17-232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01C1-148 |
| filingDate | 1967-03-23^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1970-03-25^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-1185362-A |
| titleOfInvention | Thin Film Resistor. |
| abstract | 1,185,362. Coating by vapour deposition. P.R. MALLORY & CO. Inc. March 23, 1967 [March 23, 1966], No. 13693/67. Heading C7F. [Also in Division H1] A resistor is formed by providing a ceramic or glass substrate 10 (Fig. 8) with end bands 11 of gold resinate which are baked to eliminate the organic binder following which films of (Registered Trade Mark) "nichrome" and aluminium are vacuum deposited thereon in succession as shown in the process chart of (Fig. 9). The aluminium film may be deposited first Fig. 4 (not shown) or a single film may be produced by simultaneous deposition. Instead of "nichrome" an alloy comprising 75% nickel, 20% chromium and small amounts of iron and aluminium may be used. One or more extra aluminium films may be provided if the temperature coefficient of resistance needs adjustment. The films may be covered by a vacuum deposited film of silicon monoxide and subjected to two periods of heating as shown in (Fig.9) before helixing and encapsulating. |
| priorityDate | 1966-03-23^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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