http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1281409-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a6a69da5879eb83f56f6876dba3e3cf |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03C3-22 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03B9-141 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-864 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03C3-22 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03B9-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-864 |
| filingDate | 1969-10-09^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1972-07-12^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-1281409-A |
| titleOfInvention | Solid-state microwave generating device |
| abstract | 1281409 Frequency modulation MATSUSHITA ELECTRONICS CORP 9 Oct 1969 [12 Oct 1968] 49599/69 Heading H3R [Also in Division H1] A voltage tunable microwave oscillator comprises a cavity resonator containing a semiconductor body having therein or at its surface a first junction exhibiting a negative resistance when reverse biased beyond breakdown, and a second junction exhibiting an impedance variable with the bias applied to it to permit tuning and/or modulation of the oscillator. The junction may be any metal-semi-conductor, metalinsulator-semi-conductor, or semi-conductorsemi-conductor interface able to exhibit the required characteristic. In one embodiment (Fig. 2, not shown) the junctions are formed in opposite faces of a P-type germanium wafer by indiffusion of antimony. The area of the first junction is limited by silica masking, while the variable impedance junction extends over the entire opposite face of the wafer which is bonded to a heat sink. In the other embodiment (Fig. 3) the junctions, both formed by diffusing antimony into a lightly doped epitaxial layer 6 on a more heavily doped N-type germanium substrate 6<SP>1</SP>, are situated in 100 Á diameter mesas 500 Á apart. |
| priorityDate | 1968-10-12^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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