http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1319682-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-043 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-106 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-117 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N97-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-291 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29 |
| filingDate | 1970-06-18^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1973-06-06^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-1319682-A |
| titleOfInvention | Thin film metallization process for microcircuits |
| abstract | 1319682 Semi-conductor devices TEXAS INSTRUMENTS Inc 18 June 1970 [22 July 1969] 29615/70 Heading H1K A method of providing conductive tracks on an insulated substrate 21 comprises depositing a metal film 25 on the apertured insulating film 24 and electrolytically oxidizing at least a part of the surface area of the film 25 partially through its thickness to produce an oxide layer 26, masking desired regions of the metal/oxide film at 27 and further electrolytically oxidizing the unmasked areas of the metal film through its thickness to leave the tracks. The metal film may be of aluminium, molybdenum, tantalum, titanium or zirconium and be deposited by electron gun evaporation. Oxidation may be by means of anodic oxidation in an acid bath, and masking may utilize a photo-resist material. The substrate may be of silicon and contain diffused regions forming a transistor and resistor, Fig. 7 (not shown). In an alternative construction where the tracks are desired to have free top contact, prior to the first oxidation the desired contact areas are masked, Fig. 2b (not shown), resulting in tracks having free surface portions, Fig. 2e. Alternatively these contact areas could be exposed in the first embodiment merely by etching the oxide at the desired areas. A further level of tracks may be made on the first metal/ oxide pattern by similar deposition and oxidation methods, the second level contacting the first level at the free contact portions. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1366513-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1366513-A4 |
| priorityDate | 1969-07-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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