http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1394912-A
Outgoing Links
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d70b6081ff51c4b58269dc7839704987 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03B9-141 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03B9-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03B9-12 |
filingDate | 1973-01-03^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 1975-05-21^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | GB-1394912-A |
titleOfInvention | Solid state microwave oscillator |
abstract | 1394912 Semi-conductor oscillators; tuning resonant lines LITTON INDUSTRIES Inc 3 Jan 1973 [12 Jan 1972] 459/73 Heading H1W [Also in Division H3] In a microwave oscillator having a semiconductor element 15 capable of generating microwave energy, the element 15 is operatively associated with a resonant structure constituted by an open sided transmission line which has substantially parallel conductors 1, 3, 5 and which is short-circuited to electromagnetic energy at both its ends, the structure is mounted within a shielding housing 7, 11, 19 and 21 substantially to prevent emission of the microwave energy from the oscillator other than from an output 31 and the shielding housing contains microwave absorptive material 20 such that the housing has substantially no effect on the operating frequency of the oscillator. The length of the transmission line may be less than a quarter wavelength and as shown consists of Cr elements 1 and 5 and a Cu rod 3 insulated by mica 9, 13, 14, 23, 25, 26, 27 from A1 U-shaped parts 19, 21 and Cu plates 7 and 11 forming the housing. The plate 7 also functions as a heat sink. The oscillator element is a Gunn diode 15 and the frequency of the oscillator may be varied by adjusting the bias voltage applied from 39 to varactors 16, 17 via elements 1 and 5. The output is taken from coaxial line 35 and plates 20 of lossy, i.e. microwave dissipative material are provided to reduce the quality factor of the cavity so as to load the cavity and suppress parasitic resonances. An RC filter 38 acts to suppress bias circuit oscillations. The conductor elements 1 and 5 can be moved toward or away from the post 3 during assembly to adjust the characteristic impedance of the transmission line. In modifications (Figs. 7-9 and 11, not shown) a single conductor element (53) and a rod (51) form the transmission line and the housing is formed by an A1 shielding housing (61, 64) and Cu plates (57, 59). The conductive element (53) and the bottom wall surface of the housing (61) are suitably anodized to form an aluminium oxide layer so that the conductor element (53) and the plate (59) are insulated from the housing (61). A single varactor (65) and a Gunn diode (63) are used and the output may be taken from a coaxial cable (74). Any other semi-conductor device having negative resistance characteristics suitable for a source of microwave energy could be substituted for the Gunn diode. The introduction of the Specification indicates the use of transistors, IMPATT and tunnel diodes. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-3436673-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2148065-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4521747-A |
priorityDate | 1972-01-12^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9989226 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID451818717 |
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