http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1444543-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4e06263fb2e3b4a6ea9cb3486d0deb09 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2201-3423 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1446 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J1-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-153 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1126 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-153 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-112 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J1-34 |
| filingDate | 1972-09-22^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1976-08-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-1444543-A |
| titleOfInvention | Solid state image display and/or conversion device |
| abstract | 1444543 Electroluminescence MULLARD Ltd 16 Aug 1973 [22 Sept 1972 (3)] 43958/72 Heading C4S [Also in Division H1] An image display device comprises an array of JUGFET transistor structures each with an individual display element in series with its source-drain current path, the arrangement being such that image radiation directed on to the array can generate charge carriers in or within a diffusion length of the depletion regions of the gate junctions. In the Fig. 1 structure transparent interdigitated source and drain electrodes 2, 3 of tin oxide disposed on glass support 1 contact a layer 5 of N type ZnO powder in styrene-butadiene copolymer via a layer 4 of electroluminescent ZnS in epoxy resin. A row of gate electrodes 6 of P type cuprous sulphide each with a Schottky barrier forming electrode 9 is disposed between each adjacent source-drain pair and the electrodes 9 connected to a common point. Imagewise radiation causes a corresponding amplified optical image. In another arrangement in which layer 5 is of N type silicon and layer 4 of copper and manganese doped ZnS deposited thereon, the source electrodes are annular or circular with thinner central portions, while the drains are located on the opposite face of layer 5 centrally of annular P type gate regions coaxial with the sources and are capacitively coupled via a layer of insulation to interconnected C-shaped electrodes overlying them. Variations are as in Figs. 2, 3, 4, 6 and 7 (not shown). Other devices are described in Specification 1,444,541 and devices incorporating the arrays described therein and in Specifications 1,444,542 and 1,391,934 are also envisaged. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0094973-A4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4651014-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0094973-A1 |
| priorityDate | 1972-09-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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