http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1446592-A
Outgoing Links
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|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c11ab869361f985c190a2d52fc20c75f |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2201-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-977 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-051 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2201-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-135 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-056 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J9-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J43-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J43-10 |
| filingDate | 1973-01-09^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1976-08-18^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-1446592-A |
| titleOfInvention | Dynode structures |
| abstract | 1446592 Electrode materials and processing ENGLISH ELECTRIC VALVE CO Ltd 11 Dec 1973 [9 Jan 1973] 38570/72 Heading H1D A method of producing a dynode structure, defined as emitting electrons in response to incident light, or electrons as in a multiplier, and having a thin active area 2 (e.g. 5 Á thick) of GaAs, includes etching a relatively thick body 1 of GaAs (e.g. 100 Á thick) to produce the thin active area surrounded by an integral thick frame 3. Preferably the body is rotated and inclined in a liquid etchant. Etching solutions, process details and masking materials are detailed. Area 2 is preferably coated with a Cs compound (e.g. caesium oxide), and the other face on which light or electrons impede may have a surface layer to increase the work function, e.g. a P<SP>+</SP> layer 9, ¢ to 1 Á thick, doped with Zn, Si or Ge. The body may contain 10<SP>16</SP> to 5 Î 10<SP>18</SP> acceptors/cc., the P<SP>+</SP> layer 10<SP>20</SP> acceptors/cc. In an electron tube, at least the Cs oxide surface is in a vacuum for light incidence, both surfaces being in the vacuum for electron incidence. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2170648-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2170648-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4677342-A |
| priorityDate | 1973-01-09^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9903865 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID450334339 |
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