| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7c5a4ae81822d214a07bf55ad61bd1cf |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-31701 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-026 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G21K5-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01Q60-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01Q30-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-317
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-04 |
| filingDate |
2000-04-26^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62339127beadb23a7090c154bee5ac2e |
| publicationDate |
2000-11-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
GB-2349503-A |
| titleOfInvention |
Measuring apparatus for ion implantation |
| abstract |
A measuring apparatus for measuring the charge on a substrate 2 being implanted has a plurality of measurement conductors 22 arranged in a plane crossing the ion beam 12. A plurality of bidirectional constant-voltage elements 28 are connected to the measurement conductors in a one-to-one correspondence. A plurality of current measuring instruments 30 each for measuring the polarity and the magnitude of an electric current flowing through the corresponding bidirectional constant-voltage element 28 is provided. A plurality or charge measuring instruments may alternatively be provided, measuring positive and negative charges. The output of the instruments 30 may be used to regulate a plasma source 14 which supplies electrons to neutralise the ion beam 12. The breakdown voltage of the elements 28 may be substantially equal to the breakdown voltage of the gale oxide of a MOSFET being implanted. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2373629-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6651582-B2 |
| priorityDate |
1999-04-26^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |