| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2019-12-17^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc5eb6fe6697a420ec418838d48b8b38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46942ecaa97b7136e8ab7f6e4c601942
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5276bfe7d8ecfaeee89592132012d36d |
| publicationDate |
2021-11-10^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
GB-2594868-A |
| titleOfInvention |
Tapered VIA structure in MTJ devices |
| abstract |
A bottom electrode structure for MRAM or MTJ-based memory cells comprises a taper so that the bottom CD is smaller than the top CD. A process of making a bottom electrode contact structure comprises etching a dielectric layer using a plasma chemistry with an increased degree of polymerization. We obtain a product made by this process. |
| priorityDate |
2019-01-04^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |