| abstract |
849,477. Semi-conductor devices. NATIONAL RESEARCH DEVELOPMENT CORPORATION. Sept. 18, 1958, [Sept. 23, 1957], No. 29800/57. Class 37 A semi-conductor device utilising avalanche injection comprises a semi-conductor mass of one conductivity type having an ohmic base electrode, and a second electrode of smaller cross section connected to a pillar of semiconductor which extends from the mass and has a PP+ or NN+ junction according to whether the mass in P-type or N-type respectively. Fig. 1 shows a diode in which the base electrode 6 consisting of an antimony doped gold wire is connected on to an N + region to an N type silicon mass 2 and the second electrode 1 also of antimony doped gold wire is connected via N+ region 3 to the N type mass 2. A cavity 5 produced, for example by chemical or electrolytic. etching, provides a thin pillar 4 of semi-conductor material. The current voltage characteristic of this device has a negative-resistance region. Germanium may be used in place of silicon, and aluminium in place of the gold-antimony wire. The base electrode may consist of a copper cooling fin or disc. The structure may be surrounded with pellet silicone varnish. Specification 849,476 is referred to. |