http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-982941-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0722 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F3-1855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F3-187 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F1-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F3-347 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F3-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H11-1213 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H11-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F3-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F3-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F1-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F3-347 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F3-187 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F3-185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F3-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F3-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F1-30 |
| filingDate | 1961-05-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1965-02-10^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-982941-A |
| titleOfInvention | Improvements in transistor amplifiers |
| abstract | 982,941. Semi-conductor devices. TEXAS INSTRUMENTS Inc. May 1, 1961 [May 2, 1960], No. 15722/61. Heading H1K. [Also in Division H3]. An amplifier circuit having a high input impedance (see Division H3) is formed as a solid semi-conductor network, Fig. 4a. An N-type silicon substrata 100 is diffused with gallium to form a P-type layer 102, and then with phosphorus to give a further N- type layer in the regions 104, 120, 140, 144. Between the areas 120, 140 the wafer is only P-type material, and the wafer forms an amplifier the circuit of which is shown in Fig. 4b comprising a field effect transistor 104, 106, 108 coupled to a transistor 112, 120, 121 having a load resistance formed by the region 130. The collector 121 of this transistor is coupled via a Zener diode 140 to a second transistor 142, 144, 146 having a collector load 148. In place of silicon other materials such as germanium, gallium arsenisde, indium antimonide, can be used. In a modification, Fig. 4c (not shown) an amplifier is similarly formed comprising a field effect transistor connected to common collector transistor stage. In a further modification, Fig. 5a, further P and N areas 180, 194, 190 are included to form the field effect transistors of a low pass filter in a feedback path (Specification 982,942) the supply potentials being derived across a xener diode formed on the region 180. The competed wafer forms a feedback amplifier, Fig. 5b (not shown). The gate regions of the field effect transistors may be formed alternatively by alloy techniques. Specification 945,734 also is referred to. |
| priorityDate | 1960-05-02^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Showing number of triples: 1 to 40 of 40.