http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-988097-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-963
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-32
filingDate 1961-09-27^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1965-04-07^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber GB-988097-A
titleOfInvention Process for the manufacture of very pure silicon carbide
abstract Very pure SiC is deposited on at least one heated solid body from vapour phase reaction of a halogenosilane and a halogenohydrocarbon, wherein the reactants have partial pressures of 0.002-0.02 atms. due to the use of subatmospheric pressure, and/or the presence of a non-oxidizing diluent gas. Halogenosilanes may be SiHCl3, SiCl4, SiBr4, Si2Cl6 or mixtures thereof. Halogenohydrocarbons may be halogenated saturated or unsaturated hydrocarbons, e.g. halogenated benzene or naphthalene, CCl4, C6H5CH2Cl, CHCl3, CBr4, CH3I, trichloroethylene, hexachlorobutadiene, chlorprene or mixtures thereof. The reaction takes place at 800-2500 DEG C. and at 0.001-1 atms. The heated solid body, shaped as a rod, tube, coil or plate, may be made of graphite, carbon, silicon carbide, refractory carbides, borides, silicides, Ta, W, Mo. The non-oxidizing diluent gas may be H2, H2S, a noble gas, or a mixture thereof. A metal or non-metal halide or hydride, a vaporized element, a silane or hydrocarbon containing a nitrogen, phosphorus or aluminium substituent may be added continuously or intermittently to the gaseous starting mixture to influence the electrical conductivity of the product. Specification 899,947 is referred to.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3485586-A
priorityDate 1960-09-27^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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