http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000045069-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 |
| filingDate | 1998-07-29^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4865360177e6d41d6f99d644cc1dfd69 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23dea050b5162f90226856ca4476e8a8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_659dc52be293dd203f30097056e5d68e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cb5d7ff15f419e2e9b4ae6ef02849b3 |
| publicationDate | 2000-02-15^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000045069-A |
| titleOfInvention | Magnetron sputtering apparatus and sputtering method |
| abstract | (57) [Summary] [PROBLEMS] In a magnetron sputtering apparatus, In the conventional gas introduction method, in the case of a circular substrate, the film thickness in the circumferential direction varies. The purpose is to reduce this. SOLUTION: Gas introduction ports 18 are arranged at three or more places in a film forming chamber, and a mass flow controller 5 ′, 5 "is mounted to enable individual control of the gas flow rate. Also, a vacuum exhaust port 19 having a specific shape is provided. Thus, even if the exhaust is performed by one pump 8, the film thickness in the circumferential direction of the substrate varies. , And the use efficiency of the target is improved, thereby reducing waste. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014148703-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000076858-A |
| priorityDate | 1998-07-29^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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