| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6a6c760472ee4c29e9cd26152ace2eb0 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0259
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-04 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-866
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
1999-08-17^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_afce8481505936778fd7620cf40a2c26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc0aaa6a652f3af6b8ab1222fcdaed09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cfb0ba64a2c77fed7db88eac3ad59bc3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f29c1606b47d8b0d293e2e4079469be |
| publicationDate |
2000-05-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2000138295-A |
| titleOfInvention |
Electrostatic protection device for semiconductor integrated circuit, method of manufacturing the same, and electrostatic protection circuit using electrostatic protection device |
| abstract |
(57) [Summary] [PROBLEMS] To provide an electrostatic protection device, a manufacturing method and an electrostatic protection device which can be formed without imposing any special process or photomask in a manufacturing process even when a salicide process is used. Provide an electrostatic protection circuit used. SOLUTION: The electrostatic protection device includes a thyristor and a trigger diode A for triggering the thyristor to an ON state at a low voltage. -Type cathode high-concentration impurity region 9, p-type anode high-concentration impurity region 8, n-type cathode high-concentration impurity region 9 and p-type A gate oxide film 13 formed between the gate-type anode high-concentration impurity region 8 and forming a gate of a MOS transistor of a semiconductor integrated circuit; polysilicon 14 laminated on the gate oxide film 13; And a silicide layer formed on the surface of n-type cathode high concentration impurity region 9 and a p-type anode high concentration impurity region 8 are electrically insulated from each other. And a gate sidewall insulator 12. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006080528-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113070571-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4510732-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6376342-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113070571-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009066524-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6831334-B2 |
| priorityDate |
1998-08-25^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |