| abstract |
(57) Abstract: In IC manufacturing, Ir is used without interaction with a base Si substrate. A conductive barrier according to the present invention is a conductive barrier used in an integrated circuit, and includes a substrate, a first barrier layer containing tantalum (Ta) overlying the substrate, and a first barrier layer on the first barrier layer. And an iridium (Ir) film overlying the substrate, wherein the combination of the Ir film and the first barrier layer resists interdiffusion of oxygen into the substrate. |