http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000288909-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_06f6859e19dacec5a834168e491504b2 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-015 |
| filingDate | 1999-03-31^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10b1689532766ed9988589c9a59d0200 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0dccdf279db4aa515748aa68092a8d3b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1a0c186524fa12dc9f7a7e951de8d50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22f21c6994f88450a0f30a9e7d3d4e4a |
| publicationDate | 2000-10-17^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000288909-A |
| titleOfInvention | Fabrication method of high flatness wafer |
| abstract | PROBLEM TO BE SOLVED: To provide a method of polishing a semiconductor wafer, which can improve the flatness of a semiconductor wafer and prevent a decrease in the flatness of the semiconductor wafer immediately after replacing a polishing cloth. SOLUTION: The polishing pressure from the first partial polishing step to the partial polishing step immediately before the final polishing step is made larger at the outer peripheral part than at the center part of the carrier plate 16, and the partial polishing just before the final polishing step is performed. The polishing pressure in the process makes the center load of this plate 16 larger than its outer peripheral load, In the finish polishing step, the center load and the outer peripheral load are made equal. As a result, the flatness of the silicon wafer W can be increased. Also, the polishing cloth 11 of the specific polishing platen 12 During the replacement, the cooling water is supplied to the water jacket 12a of the remaining polishing platen 12 which is not replaced, so that a decrease in the flatness of the semiconductor wafer immediately after the replacement of the polishing pad 12 can be prevented. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112010002227-B4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8877643-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112010002227-T5 |
| priorityDate | 1999-03-31^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 |
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