| abstract |
(57) [Problem] To provide a method for manufacturing a group III nitride semiconductor laser capable of obtaining a high-quality reflecting mirror surface with high reproducibility in a laser structure. SOLUTION: A group III nitride semiconductor including an active layer (Al x A plurality of crystal layers consisting of Ga 1-x ) 1-y In y N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) are divided into an underlayer (Al x ′ Ga 1-x ′ ) 1-y ′ I On n y 'N (0 ≦ x ' ≦ 1,0 ≦ y '≦ 1), a method of fabricating a nitride semiconductor laser formed by laminating in this order, the crystal on the underlying layer which is formed on a substrate A crystal layer forming step of forming a plurality of layers, a light irradiation step of irradiating a light beam from the substrate side toward an interface between the substrate and the underlying layer, and forming a decomposed region of the nitride semiconductor; A step of separating the underlayer carrying the layer from the substrate along the decomposed material region; and a step of cleaving or cleaving the underlayer to form a resonance cleavage plane of the laminated crystal layer. |