Predicate |
Object |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G8-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0233 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-032 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L61-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G8-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-023 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
filingDate |
1996-11-21^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2000-02-02^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2000501201-A |
titleOfInvention |
Method for reducing metal ions in photoresist compositions by chelating ion exchange resins |
abstract |
(57) [Summary]nThe present invention provides a method of making photoresists containing very low concentrations of metal ions using a chelating ion exchange resin that has been treated to form a neutral ammonium salt or acid form. Also provided is a method for manufacturing a semiconductor device using the photoresist composition. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010234339-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008038005-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019526668-A |
priorityDate |
1995-11-27^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |