| abstract |
[PROBLEMS] To provide a mechanochemical polishing method and a mechanochemical polishing apparatus capable of efficiently polishing a hard material such as SiC even at a low processing pressure. A polishing cloth is attached to a polishing platen. A wafer holding table 3 is arranged above the polishing platen 1, and the SiC wafer 4 is held on the wafer holding table 3. A liquid injector 5 is installed above the polishing platen 1, and a chemical solution (a dispersion of chromium oxide abrasive particles in hydrogen peroxide solution) 6 is dropped on the polishing cloth 2 from the liquid injector 5. The surface to be polished of the SiC wafer 4 is pressed against a polishing cloth 2 adhered to the polishing platen 1 at a predetermined processing pressure, and the wafer holding table 3 and the polishing platen 1 are rotated. Polishing is performed while dropping the chemical solution 6 thereon. |