http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001237385-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-851 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-65 |
| filingDate | 2000-02-24^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5c7dd82c74e9a093f791708c570d872 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93d1ff92b9378bb983a0ed6f487c1a66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09ec104616efc77c9d5d2d5fc9b545d1 |
| publicationDate | 2001-08-31^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001237385-A |
| titleOfInvention | Microstructure device, manufacturing method thereof, and high-density magnetic storage device |
| abstract | (57) Abstract: In a process of forming a microstructure, an ultra-fine magnetic structure in a magnetic storage medium having a density exceeding 100 Gbit / inch2 is used in a method of performing processing such as etching and lift-off on a deposited thin film. Could not be miniaturized while securing a sufficient thickness for storage. SOLUTION: The microstructure device 10 has a structure in which a Si substrate 1 having a convex portion surrounded by a steep slope and a microstructure 3 on the upper surface of the convex portion. The surface of the Si substrate 1 has irregularities, and the convex portions of the irregularities are surrounded by a steep slope. The fine structure 3 is formed on the upper surface of the projection via the mask pattern 2. The mask pattern 2 is formed on the Si substrate 1 by, for example, ECR chlorine plasma processing. This is an oxide film pattern for leaving the surface of the substrate as a projection when forming irregularities on the surface of the substrate. |
| priorityDate | 2000-02-24^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Showing number of triples: 1 to 23 of 23.