http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001511317-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78669 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78666 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 |
| filingDate | 1998-11-13^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2001-08-07^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001511317-A |
| titleOfInvention | Thin film transistor and electronic device comprising the thin film transistor |
| abstract | Abstract: A thin film transistor (10) in an electronic device such as an active matrix display device having an intrinsic amorphous silicon semiconductor layer (22) forming a channel between a source electrode (14) and a drain electrode (16). Comprises a layer (20) of amorphous material directly adjacent to the gate electrode (25) of the semiconductor layer (22) in the channel region (23), the amorphous material layer (20) having a high defect density and It has low conductivity and acts to form recombination centers for photogenerated carriers. The problem of leakage due to the photoconductivity of the intrinsic semiconductor material is reduced. Typically, a hydrogenated silicon-rich amorphous silicon alloy (eg, nitride, etc.) can be used for the recombination center layer (20). |
| priorityDate | 1997-12-10^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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