| abstract |
(57) Abstract: A method for removing defects in a photoresist mask in a plasma reactor, comprising introducing a substrate having a photoresist mask thereon into the plasma reactor. Further, the method includes flowing an etchant source gas comprising nitrogen into the plasma reactor. The etchant source gas is substantially free of oxidant. Further, the method includes removing defects in the photoresist mask using a plasma impinging on an etchant source gas. |