| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b3310ea86f3c492f6c09d7be6592866d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18369
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18394
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18358
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18341 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18388
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18341 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-10 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 |
| filingDate |
2002-01-28^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b3457eac6026cffdf9ebcd2e45a206c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_759d733af23872367a3ed8288e5b67d0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6501b23aba05532a06d0a3711165f07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e394af86517c7d54b4131e551df31c05 |
| publicationDate |
2002-08-23^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002237653-A |
| titleOfInvention |
GaN surface emitting laser diode having spacer for effective hole diffusion between P-type electrode and active layer, and method of manufacturing the same |
| abstract |
(57) Abstract: A GaN surface emitting laser diode is provided. SOLUTION: The surface emitting laser diode of the present invention has an active layer 40 in which light is generated, and a p-layer opposed to the active layer. -Type material layer m1, n-type material layer m2, and n-type material layer m2 The first Bragg reflective layer 49 formed thereon and the n-type material layer m2 formed around the first Bragg reflective layer 49 and provided to cover the first Bragg material layer 49. Formed on the p-type electrode 47 and the p-type material layer m1, A spacer 48 having a thickness such that holes can smoothly move to the center of the active layer 40 and having a laser emission window 48b on a region corresponding to the first Bragg reflection layer 49; A spacer 54 is formed so as to surround the formed second Bragg reflection layer 52 and the laser emission window 48b. A laser emission window 48 comprising a p-type electrode 50 formed thereon; b is characterized in that the laser diffraction by the spacer 54 is offset. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11374384-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018190030-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020084942-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7259763-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7211362-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019124163-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7078045-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7024786-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110892597-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018221042-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004235532-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11411372-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021140803-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11611196-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2018190030-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2019124163-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2018116596-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110892597-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2019003627-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10873174-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7014179-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019017044-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11594859-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018083877-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019003627-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018116596-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021261207-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2019017044-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11728625-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11489314-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11011888-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2018083877-A1 |
| priorityDate |
2001-02-02^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |