http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002289696-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11
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filingDate 2001-03-27^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5e01ed0885475b753202a00586f6b97
publicationDate 2002-10-04^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002289696-A
titleOfInvention Semiconductor device manufacturing method and semiconductor device
abstract [PROBLEMS] To improve the degree of element integration of a semiconductor device. SOLUTION: In an SRAM part, a p-type high-concentration well BPM and an n-type high-concentration well BNM having a distribution such that an impurity concentration becomes relatively high are formed at a deep position of a semiconductor substrate 1S in the whole area thereof, In the logic circuit portion, p-type high-concentration wells BPL and n-type high-concentration wells having a distribution such that the impurity concentration is relatively high at a deep position in the semiconductor substrate 1S are provided in regions other than the active region L of nMISQnl and pMISQpl. Form BNL.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006135322-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011181694-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017130608-A
priorityDate 2001-03-27^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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