| abstract |
(57) [Summary] A wafer passivation structure and a manufacturing method thereof will be described. According to one embodiment of the present invention, a metal layer having a bond pad (204) separated from a metal member (206) by a gap (208) is formed on a substrate (200). Next, a first dielectric layer (210), such as silicon dioxide, is formed over the bond pads and the metal members, completely filling the gap. Next, a second dielectric layer (212), such as silicon nitride, having a higher dielectric constant than the first dielectric layer and being hermetically sealed is formed on the first dielectric layer. . A cap dielectric layer (214), such as a polyimide, can be formed on the second dielectric layer. An electrical contact (215), such as a controlled chip contact contact (C-4) including a conductive barrier layer (216) and a bump (218) is formed through all the dielectric layers to form a bond pad (204) and an electrical contact. Make contact. |