http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002504709-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-0316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-2255 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-225 |
| filingDate | 1999-02-11^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-02-12^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002504709-A |
| titleOfInvention | Integrated optical modulator with high gain bandwidth product |
| abstract | (57) [Summary] The present invention relates to an integrated light modulator device (1) and a method for manufacturing the same. Preferably, in the Mach Zhender architecture, the lithium niobate substrate (2) has waveguides (52) fabricated on them for propagating light energy, and a middle in the middle of these waveguides. There is an electrode (51). The waveguide is also demarcated by low resistivity close electrode metallization (50), such as copper and silver, to provide a device having a high gain bandwidth product, Reduces the cost of drive electronics and simplifies processing procedures. The modulator device also comprises a buffer layer (55), preferably silicon dioxide. The gain bandwidth product exceeds 4.5 × 10 5 . The waveguide terminates in impedance (54) for best RF performance, and the RF driver (56) is connected to the electrodes. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019187558-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019179122-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7135384-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11327347-B2 |
| priorityDate | 1998-02-18^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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