http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003017805-A

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filingDate 2002-05-09^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76b54f3cf7625b0143c7245e2c834fe0
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publicationDate 2003-01-17^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2003017805-A
titleOfInvention High power semiconductor laser diode
abstract PROBLEM TO BE SOLVED: To provide a semiconductor laser diode, especially AlGa As-based ridge waveguide laser diodes are often used in the optoelectronics field as so-called pump laser diodes for fiber amplifiers in optical communication lines. In order to provide the desired high power and reliability of such laser diodes and to avoid degradation during use, the present invention provides an improved design of such devices, and in particular, the (front) of such laser diodes. ) Significantly minimize or avoid edge degradation, And significantly improving long-term stability as compared to prior art designs. This is achieved by providing one or two "non-pumped ends" of the laser diode. One preferred method of providing such non-pumped ends to the laser facets (10, 12) is to provide an insulating layer (11, 13) of predetermined location, size and shape with the semiconductor material of the laser diode, typically. Intercalation between existing metallization layers (6).
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