| abstract |
(57) [Problem] To provide a method for manufacturing a semiconductor light emitting device which has good crystallinity and can be miniaturized without increasing the number of steps. A method of manufacturing a semiconductor light emitting device including a crystal layer, a first conductivity type layer, an active layer, and a second conductivity type layer on a substrate, wherein a metal layer is formed on the second conductivity type layer. Separation is performed for each element by etching using the metal layer as a mask. According to the method for manufacturing a semiconductor light emitting element as described above, the element is separated by etching using the metal layer as a mask, so that the element can be separated with high accuracy and the element can be miniaturized. |