| abstract |
The present invention provides a metal polishing composition that can polish a metal wiring at a high speed at the time of manufacturing a semiconductor device and can suppress an etching rate of the metal wiring. [Solution] (A) a chelate resin particle having at least one functional group selected from the group consisting of an aminocarboxylic acid group, an aminophosphonic acid group, and an iminoniacetic acid group, (b) inorganic particles, (C) a carboxylic acid group, and sulfonic acid. A metal polishing composition comprising a surfactant having at least one functional group selected from the group consisting of a group and a phosphate group. [Selection diagram] None |