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filingDate 2003-11-18^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56b5f16a83e932d9133e2413c4acc555
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad77d795b07a48b247a8e6c682772d0c
publicationDate 2004-07-22^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2004206862-A
titleOfInvention Two-layer pattern forming method and pattern etching method
abstract Using a two-layer photolithography method, a first photoresist layer, which is a lower layer functioning as a protective layer and a filter layer, is formed on the upper surface of the substrate, and a groove is formed on the substrate by performing FIB etching. A second photoresist layer is formed on the surface of the first photoresist layer with high precision, and the second photoresist layer defines a plurality of high-precision photoresist patterns. The patterns include a pattern for displaying an area to be etched, a target reference mark, and a pattern functioning as a reference mark for alignment. [Selection diagram] FIG.
priorityDate 2002-11-18^^<http://www.w3.org/2001/XMLSchema#date>
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