| abstract |
High reliability is obtained in a surface emitting semiconductor laser element in a 780 nm band. An n-type GaAs buffer layer, an n-type Al 0.9 Ga 0.1 As / Al 0.3 Ga 0.7 As lower semiconductor multilayer reflective film 13 and an undoped InGaP spacer are formed on an n-type GaAs substrate 11. Layer 14, quantum well active layer 15 composed of an undoped InGaAsP quantum well layer and an undoped InGaP barrier layer, an undoped InGaP spacer layer 16, a p-type Al 0.5 Ga 0.5 As spacer layer 17, a p-type AlAs layer 18, p Type Al 0.5 Ga 0.5 As spacer layer 19, p-type Al 0.9 Ga 0.1 As / Al 0.3 Ga 0.7 As upper semiconductor multilayer reflective film 20, and p-type contact layer 21 are sequentially laminated. To do. Next, the p-type contact layer 21 is etched away from the upper part of the light emitting region, and further etched to a part of the lower semiconductor multilayer reflective film 13 to form a columnar region having a diameter of 50 μm, and then the p-type AlAs layer 18 is formed. The region 18a other than the current injection region is selectively oxidized. [Selection] Figure 1 |