| abstract |
PROBLEM TO BE SOLVED: To provide a thin film transistor capable of obtaining a relatively large on-state current even when formed on an insulating substrate having low heat resistance. In manufacturing a thin film transistor through a protective insulating film over an insulating substrate, at least one of two impurity diffusion layers constituting the thin film transistor includes at least two regions having different crystallinity, and The problem was solved by distributing the region having the highest electrical resistance among the at least two regions in the surface layer portion on the channel region side. [Selection] Figure 1 |