| abstract |
PROBLEM TO BE SOLVED: To provide a field effect transistor having a gate all around (GAA) structure and a manufacturing method thereof. In a method of manufacturing a field effect transistor, a step of forming first and second active regions protruding from an upper surface of a lower layer that is spaced apart from each other and supports an upper layer of the semiconductor substrate, usually at a part of the upper layer of the semiconductor substrate. Forming a bridge-shaped third active region that is vertically separated from the upper surface of the lower layer and connects between the first and second active regions, and gate insulation covering the third active region Forming a gate electrode on the gate insulating film so that the third active region functions as a channel after forming the film. [Selection] Figure 1 |