http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006019485-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38520f366e74704305b34fb93a81121e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-93 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03L7-099 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-93 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate | 2004-07-01^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99777a3b16e6c22e73edd67cf442bdb4 |
| publicationDate | 2006-01-19^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006019485-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a variable capacitance diode or the like whose capacitance can be arbitrarily changed in a manufacturing process without changing a circuit pattern. On the surface of a silicon substrate, n ions are implanted in parallel lines, and a diffusion region 11 serving as an electrode of a variable capacitance diode is provided. Control electrodes 14 and 15 are formed on the surface between the diffusion regions 11 via comb-shaped gate oxide films 12 and 13 formed in a nested manner. The thickness of the gate oxide film 12 is formed to the same 2.5 nm as the gate oxide film of the transistor in the logic circuit 3, and the gate oxide film 13 is set to the same 5.0 nm as the gate oxide film of the transistor in the input circuit 2. Is formed. The capacitance of the variable capacitance diode can be changed without changing the circuit pattern by changing the composition ratio of the two types of film thicknesses or cutting the comb teeth with a laser beam after manufacturing. [Selection] Figure 1 |
| priorityDate | 2004-07-01^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 |
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