http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006032533-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38520f366e74704305b34fb93a81121e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E02D2300-0004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03L7-099 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E02D29-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-93 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-94 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-94 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 |
| filingDate | 2004-07-14^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c583be59b048ba0e1db694dd20ba6ac0 |
| publicationDate | 2006-02-02^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006032533-A |
| titleOfInvention | Semiconductor integrated circuit |
| abstract | PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit having a variable capacitance diode capable of arbitrarily changing a variable range of capacitance in a manufacturing process without changing a circuit pattern. An n-type well is formed on a p-type silicon substrate, and n + ions are implanted into the surface of the n-type well in a parallel line shape, and a diffusion region serving as an electrode of a variable capacitance diode is provided. It is done. A plurality of linear gate oxide films 13 and control electrodes 14 are formed on the surface between the diffusion regions 12. Among the gate oxide films 13, the thicknesses of the gate oxide films 13a to 13c are formed to be 5.0 nm, which is the same as the gate oxide film of the transistor in the input circuit 2, and the remaining gate oxide films 13d to 13f are formed in the internal circuit 3. It is formed to the same 2.5 nm as the gate oxide film of the transistor inside. By changing the composition ratio of the two types of film thicknesses, the capacitance of the variable capacitance diode can be changed without changing the circuit pattern. [Selection] Figure 1 |
| priorityDate | 2004-07-14^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 |
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