| abstract |
In a wide gap semiconductor device such as SiC used at a high temperature of 150 ° C. or higher, the insulating property of a wide gap semiconductor element is improved and a wide withstand voltage wide gap semiconductor device is obtained. The outer surface of a wide gap semiconductor element is covered with a synthetic polymer compound containing one or more silicon-containing polymers having a crosslinked structure of siloxane (Si—O—Si bond). The synthetic polymer compound may be, for example, one or more reactive groups (A ′ selected from the group of Si—R 1 , Si—O—R 2, and Si—R 3 —OCOC (R 4 ) ═CH 2. And a component having a weight average molecular weight of 1000 or less and having a cross-linking structure by Si—O—Si bond is 20% by weight or less. [Selection] Figure 1 |