| abstract |
【Task】 Provides compound semiconductors that exhibit light emission characteristics, Vf characteristics, etc. that are equal to or higher than those of nitride-based compound semiconductors using Si as an n-type dopant, but using Ge instead of Si To do. [Solution] (1) An n-type third layer doped with an n-type dopant (carrier concentration 5 × 10 17 to 5 × 10 18 cm −3 ), a surface having irregularities and Ge-doping, The n + -type first layer (1 × 10 18 to 3 × 10 19 cm −3 ) having a higher carrier concentration is provided, and the unevenness of the first layer is flattened between the two layers. N-type nitride-based compound semiconductor having an n − -type second layer (1 × 10 14 to 1 × 10 18 cm −3 ) having a lower carrier concentration than the third layer . (2) A nitride-based compound semiconductor comprising a layer made of the n-type nitride-based compound semiconductor of (1) as an n-type nitride-based compound semiconductor layer. [Selection] None |