http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006211589-A

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filingDate 2005-01-31^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c22cd1a91f6e1d31c4d0b53a3dbd251
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publicationDate 2006-08-10^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2006211589-A
titleOfInvention Piezoelectric thin film device and manufacturing method thereof
abstract Piezoelectric thin film resonators are greatly affected by the characteristics of the resonators due to the crystallinity of a piezoelectric layer. In order to form a good piezoelectric layer, the lower electrode layer serves as an underlayer for the piezoelectric layer, so that a good electrode layer (particularly the lower electrode layer) is required. Therefore, an electrode layer having excellent crystallinity and a method for producing the electrode layer are required. In a piezoelectric thin film device, a piezoelectric thin film device formed by an electrode layer heated for a predetermined time at a temperature higher than the temperature at which the electrode layer is formed after the lower electrode layer is formed, and a method for manufacturing the piezoelectric thin film device. [Selection] Figure 2
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