| abstract |
PROBLEM TO BE SOLVED: To provide a copper bonding wire for a semiconductor element having a low material cost and excellent bonding property, loop control, wire deformation, etc., for a semiconductor having a large diameter for power IC use or a low cost priority. The purpose is to provide. A bonding wire having a core material mainly composed of copper and a skin layer of a conductive metal having a composition different from that of the core material on the core material, the copper in the wire radial direction within the skin layer. A bonding wire for a semiconductor device, wherein the copper concentration on the surface of the skin layer is 0.1 mol% or more. [Selection figure] None |