| abstract |
A resist material containing fluorine atoms or silicon atoms in a base polymer is applied to a substrate to form a resist film, and then the resist film is exposed at an exposure wavelength of 180 nm or less, post-exposure baked, and then A resist surface comprising an aqueous solution containing a fluorosurfactant having an amine salt of carboxylic acid or sulfonic acid as a hydrophilic group, having a surface tension at 25 ° C. of 25 dyne / cm or less and a pH at 25 ° C. of 7 or less A pattern forming method comprising developing after a prewetting treatment with a treating agent composition. According to the present invention, it is possible to improve the wettability of a resist film using a base polymer containing fluorine atoms or silicon atoms with respect to a developing solution, and to form a resist pattern free from defects due to poor development. it can. [Selection figure] None |