http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006295200-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_af2a54ef138604c5b43bc962f5efd4bf |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R1-06738 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2648 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R1-06761 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-312 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R1-067 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 2006-04-05^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f504388636f22a001b30c163f0abaeb9 |
| publicationDate | 2006-10-26^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006295200-A |
| titleOfInvention | Method for measuring a semiconductor wafer with an oxide-enhanced probe |
| abstract | A semiconductor wafer response to a CV stimulus applied to a semiconductor wafer by a contact or a probe through a coated ultrathin dielectric layer of the semiconductor wafer without causing a leakage current to flow through the dielectric layer. A method for measuring at least one electrical property of a semiconductor wafer is performed on its outer surface by a controlled oxidation process, such as, but not limited to, thermal oxidation, anodic oxidation, or precipitation oxidation. Providing an elastically deformable and electrically conductive contact 6 having an insulating oxide layer 60 formed thereon. A first electrical contact is formed between the oxide layer 60 on the surface of the contact 6 and the dielectric layer 14 on the upper surface 16 of the semiconductor wafer 10, and a second electrical contact is formed on the semiconductor wafer 10. A CV-like stimulus is applied between the first electrical contact and the second electrical contact. The response of the semiconductor wafer 10 to this CV-like stimulus is measured, and from this response at least one electrical property of the dielectric layer 14, the semiconductor wafer 10 or both is measured. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009092554-A |
| priorityDate | 2005-04-05^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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