| abstract |
A means for effectively preventing wire breakage caused by an increase in the amount of heat applied to a semiconductor integrated circuit device is provided. A metal layer including a palladium layer is provided at a portion to which a conductive connecting member is connected, and an alloy layer having a melting point higher than that of a tin-lead eutectic solder and not including lead as a main constituent metal is sealed with a resin. Provided outside the part to be stopped. A metal layer is provided on the connecting portion so that the thickness of the portion to which the connecting member having conductivity is pressed is 10 μm or more. [Selection] Figure 26 |