http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007037397-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cd6ca8e79041647c503ac1861ecd0ee9
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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C1-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C7-12
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02H9-06
filingDate 2006-07-21^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7db744cb793d4f86c07188610b4f05b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67b100559329307e2f41bac9e2360f12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67f46dcdfac2ca30cd4cccffe72318d6
publicationDate 2007-02-08^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007037397-A
titleOfInvention Transient voltage suppression device, overvoltage suppression chip device, overvoltage suppression device manufacturing method, impedance material, and impedance material manufacturing method
abstract An overvoltage suppression device is manufactured at a lower cost and with higher reliability so that the transient voltage suppression device can be manufactured with a high manufacturing yield. Transient voltage suppressor includes dielectric layers (20, 22) that define a receptacle for a variable impedance material proximate electrode (12) with gap (36). A method is also provided for manufacturing the device 10 and for preparing the variable voltage material at a low cost and with a higher manufacturing yield. [Selection] Figure 2
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8422188-B2
priorityDate 2005-07-21^^<http://www.w3.org/2001/XMLSchema#date>
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