http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007103538-A

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filingDate 2005-09-30^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d7ce194e275e3192404f2329870846f
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publicationDate 2007-04-19^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007103538-A
titleOfInvention Light emitting diode and manufacturing method thereof
abstract Provided are a light emitting diode capable of achieving both excellent light extraction efficiency by a transparent electrode and low contact resistance, and a method for manufacturing the same. The composition ratio of any element constituting the compound is provided on the light emitting layer, the n-type contact layer formed on the light emitting layer, and formed on the n-type contact layer. There is provided a light emitting diode comprising: a composition modulation layer having a higher composition ratio of the element in the compound; and a transparent electrode provided on the composition modulation layer. [Selection] Figure 1
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