http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007200521-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-44
filingDate 2006-12-21^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bb761a089dba691e10fe050a316ea73
publicationDate 2007-08-09^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007200521-A
titleOfInvention Nonvolatile memory, writing method thereof, and semiconductor device
abstract Since a write-once memory can be written only once, a defective bit cannot be detected by an actual write test. For this reason, as described above, it is not possible to take a countermeasure such as providing a redundant circuit and shipping after correcting a defective bit, and it is difficult to provide a memory with few defects. It is an object of the present invention to provide a write-once memory in which the defect probability is greatly reduced. A redundancy memory cell, a first circuit that assigns an address to the redundancy memory cell, a second circuit that outputs a determination signal indicating whether writing has been performed normally, and the determination signal are input. A non-volatile memory that can be written only once, comprising: a first circuit that controls a timing of the second circuit; [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101727916-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020222068-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2022062088-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011100442-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015164208-A
priorityDate 2005-12-28^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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